Majority carrier mobility in highly-doped n-type Si:高掺杂n型硅中的载流子迁移率

Solid-State Electronics Vol. 35, No. 9, pp. 1261-1268, 1992Printed in Great Britain. All rights rese

腾讯文库MajorityMajority carrier mobility in highly-doped n-type Si:高掺杂n型硅中的载流子迁移率