不同扩散掩膜方式对InGaAs平面探测器性能影响研究(英文)

不同扩散掩膜方式对InGaAs平面探测器性能影响研究(英文)Research on the Effects of Different Diffusion Masking Methods on the

InGaAs 不同扩散掩膜方式对平面探测器性能影响研 () 究英文 ResearchontheEffectsofDifferentDiffusionMasking MethodsonthePerformanceofInGaAsPlanarDetectors Introduction InGaAs(indiumgalliumarsenide)detectorsarewidelyusedin manyfields,suchastelecommunications,sensing,imaging,and astronomyduetotheiruniquepropertiessuchashighquantum efficiency,lownoiseandhighspeed.TheperformanceofInGaAs detectorsislargelydictatedbythediffusionprocess,bywhichthe materialpropertiescanbemodifiedtocontrolthethickness, concentrationanddopingleveloftheactiveregion.Theeffectof thediffusionmaskingmethodontheperformanceofInGaAs detectorshasbeeninvestigatedinthisresearch. Methods TheInGaAsplanardetectorswerefabricatedusingthe metalorganicvaporphaseepitaxy(MOVPE)technique.Theactive InGaAslayerwaslocatedbetweenthelatticematchedInPbuffer layerandthep++InGaAscontactlayer.Differentdiffusion maskingmethodswereemployed,includingstandardlithography combinedwithphotoresistmask,etch-stoplayersandhigh-purity aluminummasking.Thesampleswerecharacterizedusingseveral techniquesincludingX-raydiffraction,SEM,AFMand current-voltagemeasurement. Results Itwasfoundthatthediffusionmaskingmethodhasa significantinfluenceontheperformanceofInGaAsplanar detectors.TheX-raydiffractionpatternsshowedthatthecrystal qualityoftheInGaAsactivelayerwasaffectedbythediffusion process,wherealowercrystalqualitywasobservedforthe sampleswithaluminummaskduetothehigherannealing temperatureusedinthismethod.TheSEMimagesrevealedthat thesurfacemorphologyoftheactivelayerwasalsoaffectedby thediffusionmaskingmethod,wherethesamplewithaluminum maskshowedaroughersurfacecomparedtothesamplewith photoresistmask.TheAFMimagesconfirmedtheroughness