Cl掺杂对CuI薄膜发光性能增强研究（英文）

Cl掺杂对CuI薄膜发光性能增强研究（英文）Enhanced Luminescent Properties of CuI Thin Films through Cl DopingAbstract:In

ClCuI 掺杂对薄膜发光性能增强研究（英文） EnhancedLuminescentPropertiesofCuIThinFilmsthrough ClDoping Abstract: Inthisstudy,weinvestigatedtheeffectsofCldopingonthe luminescentpropertiesofCuIthinfilms.CuIthinfilmswere preparedbythermalevaporationmethodandcharacterizedby X-raydiffraction(XRD),scanningelectronmicroscopy(SEM),and photoluminescence(PL)spectroscopy.Theresultsshowedthatthe CldopingeffectivelyimprovedthecrystallinityoftheCuIthin films,resultinginincreasedluminescentintensityandreduced bandgapenergy.ThePLemissionpeakwasshiftedtowardsthe visibleregion,withtheincreaseddopingconcentrationofCl, whichindicatesthatCldopingchangedtheelectronicband structureoftheCuIfilm.Moreover,thePLlifetimewasalso improvedwithincreasingClconcentration,whichisattributedto thereductionofsurfacerecombinationcentersbyCldoping.Our findingsofferapromisingapproachtoenhancetheluminescent propertiesofCuIthinfilmsandadvancetheirpotential applicationsinoptoelectronics. Introduction: Copperiodide(CuI)isapromisingmaterialfor semiconductingandoptoelectronicapplicationsduetoitswide bandgap,highphotoluminescence(PL)efficiency,andlowtoxicity. However,thePLintensityofCuIisusuallylowduetothesurface recombinationeffect,whichlimitsitspracticalapplications. Therefore,exploringeffectiveapproachestoenhancethe luminescentpropertiesofCuIisofgreatsignificance. Recently,dopinghasbeenintroducedtomodifythe propertiesofCuIthinfilms.Forinstance,CdandZndopingwere reportedtoenhancethephotovoltaicperformanceofCuI-based solarcells[1].MndopingwasfoundtoimprovethePLintensity andreducethebandgapenergyofCuIpowder[2].Inthisstudy, weinvestigatedtheeffectsofCldopingontheluminescent propertiesofCuIthinfilms. Experimental: