镀铜银纳米线导电薄膜铜层蚀刻液研究

镀铜银纳米线导电薄膜铜层蚀刻液研究Title: Research on Etching Solutions for Copper Layer in Copper-Silver Nanowire Con

镀铜银纳米线导电薄膜铜层蚀刻液研究 Title: Research on Etching Solutions for Copper Layer in Copper-Silver Nanowire Conductive Thin Films Introduction: Copper-silver nanowires (Cu-Ag NWs) have gained significant attention as apromising alternative to indium tin oxide (ITO) for transparent conductive electrodes in various optoelectronic devices. The improved conductivity, flexibility, and cost-effectiveness of Cu-Ag NWs make them highly desirable for applications such as touch screens, solar cells, and flexible displays. However, the presence of athin copper layer on the surface of these nanowires can hinder their overall performance. This study aims to investigate and develop effective etching solutions to remove the copper layer without degrading the silver nanowires' integrity and electrical conductivity. Methods: 1. Synthesis of Copper-Silver Nanowires: Copper-silver nanowires are synthesized using apolyol method, where copper and silver salts are reduced in ethylene glycol with the aid of astabilizing agent. The resulting nanowires are then dispersed in asuitable solvent. 2. Characterization of Copper-Silver Nanowires: The synthesized nanowires are characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) to determine their morphology and size distribution. X-ray diffraction (XRD) analysis is conducted to confirm the presence of copper and silver phases in the nanowires. 3. Preparation of Copper-Silver Nanowire Thin Films: The nanowires are dispersed in asolvent to obtain auniform suspension. The suspension is then drop-cast or spin-coated onto a substrate to form athin film. The copper layer on the nanowires' surface acts as aprotection layer during the coating process. 4. Etching Experiments: Various etching solutions are prepared using different chemical reagents, including acids, alkalis, and complexing agents. The nanowire