用分数维空间方法研究量子阱中激子效应对三次谐波产生的影响(英文)

用分数维空间方法研究量子阱中激子效应对三次谐波产生的影响(英文)Title: Investigation of the Impact of Exciton Effects on Third Harmo

用分数维空间方法研究量子阱中激子效应对三次谐波 () 产生的影响英文 Title: Investigation of the Impact of Exciton Effects on Third Harmonic Generation in Quantum Wells using Fractional Dimensional Approach Abstract: In recent years, the study of quantum wells has gained significant attention due to their unique optical properties. These systems, with characteristic dimensions on the nanoscale, exhibit quantum confinement effects that enable the manipulation of electron-hole pairs known as excitons. This paper aims to investigate the influence of exciton effects on third harmonic generation (THG) in quantum wells using afractional dimensional approach. By considering the system as a fractional-dimensional space, we analyze the properties of excitons and their contributions to the nonlinear optical response. Introduction: Quantum wells are artificially engineered structures composed of thin layers of semiconducting materials. Due to the quantum confinement effect, the energy levels of electrons and holes in the wells become quantized, leading to the formation of excitons. Excitons are bound electron-hole pairs having discrete energy levels and properties that significantly differ from those of free electrons or holes. The confinement of excitons within the quantum wells creates aunique environment for studying their optical properties and nonlinear optical phenomena. Third harmonic generation is anonlinear optical process where three incident photons combine to generate aphoton with triple the frequency (third harmonic). This process is governed by the material's nonlinear susceptibility, which can be enhanced by the presence of excitons. Understanding the influence of exciton effects on THG in quantum wells can provide insights into the underlying physics and potential applications in nonlinear optics. Methodology: To investigate the impact of exciton effects on THG in quantum wells, we employ afractional dimensional approach. In this approach,