掺铬的砷化镓热处理的研究

掺铬的砷化镓热处理的研究Title: Study on the Heat Treatment of Chromium-Doped Gallium ArsenideAbstract:This resea

掺铬的砷化镓热处理的研究 Title: Study on the Heat Treatment of Chromium-Doped Gallium Arsenide Abstract: This research paper analyzes the heat treatment process of chromium-doped gallium arsenide (GaAs:Cr) to improve its structural and electrical properties. The objectives of this study were to investigate the impact of heat treatment on the crystalline structure, carrier concentration, and electrical conductivity of GaAs:Cr. The findings suggest that heat treatment plays acrucial role in manipulating the properties of GaAs:Cr, making it apromising material for electronic and optoelectronic devices. Introduction: Gallium arsenide (GaAs) is awell-known semiconductor material with excellent electrical and optical properties that make it ideal for a wide range of applications in electronics and optoelectronics. The addition of chromium (Cr) as adopant further enhances the performance of GaAs by tailoring its electronic properties. However, to achieve optimal performance, it is essential to carefully control the manufacturing process, including the heat treatment process. Heat treatment is known to influence the structural and electrical characteristics of semiconductors, and thus, its impact on GaAs:Cr warrants further investigation. Methods: In this study, high-quality GaAs:Cr wafers were fabricated using the liquid encapsulated Czochralski (LEC) method. The samples were then subjected to heat treatment under different temperature and time conditions, ranging from 700°C to 900°C for durations of 30 minutes to 2hours. X-ray diffraction (XRD) analysis was performed to study the changes in the crystal structure, while Hall effect measurements were conducted to investigate the influence of heat treatment on carrier concentration and electrical conductivity. Results and Discussion: The XRD analysis revealed that heat treating GaAs:Cr resulted in changes in its crystal structure. At higher temperatures, the GaAs:Cr lattice underwent athermal annealing process, promoting the repair