InAs基InAsGa(As)Sb Ⅱ类超晶格长波红外探测器湿法腐蚀研究（英文）

InAs基InAsGa(As)Sb Ⅱ类超晶格长波红外探测器湿法腐蚀研究（英文）Title: Wet Etching Study of InAs-based InAs/Ga(As)Sb Type-II

InAsInAsGa(As)SbⅡ 基类超晶格长波红外探测器 湿法腐蚀研究（英文） Title:WetEtchingStudyofInAs-basedInAs/Ga(As)SbType-II SuperlatticeLong-WavelengthInfraredDetectors Abstract: Inrecentyears,Type-IIsuperlattice(T2SL)materialshave gainedsignificantattentioninthefieldofinfrareddetectorsdue totheiruniqueelectronicandopticalproperties.InAs-based InAs/Ga(As)SbT2SLsholdparticularpromiseforlong-wavelength infrared(LWIR)detection.Inthisstudy,weinvestigatethewet etchingprocessforfabricatingefficientInAs/Ga(As)SbT2SLLWIR detectors. Introduction: Thedevelopmentofhigh-performanceLWIRdetectorsis crucialforawiderangeofapplications,includingnightvision, thermalimaging,andsurveillancesystems.Traditionalinfrared detectorsfacechallengesintermsoflowsensitivityandhigh manufacturingcosts. Inrecentyears,T2SLmaterialshaveemergedasapromising alternativeforLWIRdetectionduetotheiruniquebandstructure engineeringcapabilities.AmongvariousT2SLmaterials, InAs/Ga(As)SbT2SLhasattractedsignificantattentionduetoits excellentcarrierlifetimeandtransportpropertiesatLWIR wavelengths. Methods: Inthisstudy,weemployedawetetchingprocesstofabricate InAs/Ga(As)SbT2SLLWIRdetectors.Thewetetchingprocess removesunwantedmaterialsfromthesurface,therebyenhancing theoverallperformanceofthedevices.Weutilizedacombination ofsulfuricacidandhydrogenperoxideastheetchingsolutiondue totheirhighselectivitytowardsInAsandGa(As)Sblayers. ResultsandDiscussion: Thewetetchingprocesswasoptimizedtoachieve high-performanceLWIRdetectors.Theetchingtimeand